کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5356665 | 1503654 | 2014 | 7 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Evolution of porous network in GaSb under normally incident 60Â keV Ar+-ion irradiation
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
GaSb(1 0 0) samples were irradiated with 60 keV Ar+-ions at normal incidence for fluences in the range of 7 Ã 1016 to 3 Ã 1018 ions cmâ2 at room temperature, showing gradual evolution of a porous surface layer containing interconnected nanofibers. In particular, fluence dependent formation of patches on the nanoporous layer is observed by scanning electron microscopy. Combined results of grazing incidence x-ray diffraction and transmission electron microscopy reveal the presence of nanocrystallites in the porous structures. Compositional analysis by x-ray photoelectron spectroscopy indicates the development of oxide phases, mainly Ga2O3 and Sb2O3 where the former increases with fluence. We have proposed a model addressing a competition between ion-induced-defect driven growth of the nanoporous layer and redeposition of sputtered target atoms on the growing layer.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Applied Surface Science - Volume 310, 15 August 2014, Pages 189-195
Journal: Applied Surface Science - Volume 310, 15 August 2014, Pages 189-195
نویسندگان
D.P. Datta, A. Kanjilal, S.K. Garg, P.K. Sahoo, B. Satpati, D. Kanjilal, T. Som,