The effects of grain boundary scattering on electrical resistivity of Ag/NiSi silicide films formed on silicon substrate at 500 °C by RTA

- It is a systematic study of various thicknesses (28-260 nm) of Ag/Ni-Si silicide films.
- The temperature-dependent resistivity measurements of the films are studied.
- Resistivity variation of the films with temperature exhibits an unusual behavior.
- Parallel-resistor formula is reduced to Matthiessen's rule in this study.
- Reflection coefficients have been found in a wide temperature and thickness range.