کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5357634 | 1388221 | 2010 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Electrical properties of the CdTe back contact: A new chemically etching process based on nitric acid/acetic acid mixtures
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
The performance of the back contact is one of the major issues of CdTe solar cell research. Standard nitric-phosphoric (NP) acid chemical etching before metallization is widely used to improve contact formation. However, previous studies of this traditional etching method indicated a blocking Schottky barrier at the back contact, and a roll-over phenomenon was found in the J-V curves of the CdTe solar cells. In this work, a new etching solution, i.e. a nitric-acetic (NA) acid was employed. The etching rate was slow and a Te-rich layer was formed on the surface, which was less than 1Â nm. The CdTe solar cell with this new etching method showed no roll-over phenomenon and displayed a good ohmic back contact performance. XPS analysis demonstrated that the back contact barrier height was close to those of CdTe with standard NP etching. A possible mechanism was presented for the improvement of back contact properties.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Applied Surface Science - Volume 256, Issue 20, 1 August 2010, Pages 5803-5806
Journal: Applied Surface Science - Volume 256, Issue 20, 1 August 2010, Pages 5803-5806
نویسندگان
Junfeng Han, Chunjie Fan, C. Spanheimer, Ganhua Fu, Kui Zhao, A. Klein, W. Jaegermann,