کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5357658 | 1388221 | 2010 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Study of n+ type porous GaAs by photoluminescence spectroscopy: Effect of the etching time on the deep levels
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
Photoluminescence (PL) analysis is used to study porous layers elaborated by electrochemical etching of n+ Si-doped GaAs substrate with different etching times. Temperature and power dependence photoluminescence (PL) studies were achieved to characterize the effect of the etching time on the deep levels of the n+ Si-doped GaAs. The energy emission at about 1.46Â eV is attributed to the band-to-band (B-B) (e-h) recombination of a hole gas with electrons in the conduction band. The emission band is composed of four deep levels due to the complex of (VAsSiGaVGa), a complex of a (Ga vacancy - donor - As vacancy), a (SiGa-VGa3â) defect or Si clustering, and a (gallium antisite double acceptor-effective mass donor pair complex) and which peaked, respectively, at about (0.94, 1, 1.14, and 1.32Â eV). The PL intensity behavior as function of the temperature is investigated, and the experimental results are fitted with a rate equation model with double thermal activation energies.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Applied Surface Science - Volume 256, Issue 20, 1 August 2010, Pages 5946-5951
Journal: Applied Surface Science - Volume 256, Issue 20, 1 August 2010, Pages 5946-5951
نویسندگان
T. Abdellaoui, M. Daoudi, A. Bardaoui, R. Chtourou,