کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5358749 | 1503669 | 2014 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Ferromagnetism and spin polarization in indium nitride, indium oxynitride, and Cr substituted indium oxynitride films
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
We have investigated the structural, electrical, and magnetic properties of both sputter deposited indium oxynitride and Cr substituted indium oxynitride films as well as InN films grown by molecular beam epitaxy. The degenerate oxynitride films exhibit n-type carrier concentrations in excess of 1020 cmâ3 and remain conducting to low temperatures, while the InN samples have much lower carrier concentrations and are insulating at low temperatures. At the same time all of these films show a room temperature ferromagnetic signal, with saturation magnetization ranging from 0.05 emu cmâ3 for the indium oxynitride and InN films to 0.30 emu cmâ3 for the Cr substituted film. Low temperature point contact Andreev reflection measurements find a spin polarizations from 46 ± 2% for indium oxynitride to 50 ± 2% for the Cr substituted films. These results highlight the potential of nitrides for spintronic applications.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Applied Surface Science - Volume 295, 15 March 2014, Pages 189-193
Journal: Applied Surface Science - Volume 295, 15 March 2014, Pages 189-193
نویسندگان
P. Thapa, G. Lawes, B. Nadgorny, R. Naik, C. Sudakar, W.J. Schaff, A. Dixit,