کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5358750 | 1503669 | 2014 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
About the key factors driving the resistivity of AuOx thin films grown by reactive magnetron sputtering
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
Deposition of gold containing oxygen thin films was carried out at room temperature onto silicon substrates by reactive magnetron sputtering under Ar/O2 plasma. Nuclear reaction analysis of films shows that different oxygen concentrations (AuOx with x = 0-1.2) can be reached depending on the growth conditions. X-ray diffraction and scanning electron microscopy of the deposited samples evidence nanocrystallised films formed of pure Au phase or of Au metal mixed to a low ordered Au2O3 phase. The films display a columnar growth with grains in the 20-30 nm size range. A higher resistivity than that of pure gold is systematically measured by a four probe method. The electrical resistivity of the films was found to be correlated to the mean oxygen amount, and also to the microstructure of the Au phase.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Applied Surface Science - Volume 295, 15 March 2014, Pages 194-197
Journal: Applied Surface Science - Volume 295, 15 March 2014, Pages 194-197
نویسندگان
V. Dolique, A-L. Thomann, E. Millon, A. Petit, P. Brault,