کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5360111 | 1503687 | 2013 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Characterization of gadolinium oxide thin films with CF4 plasma treatment for resistive switching memory applications
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موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
The effect of the CF4 plasma treatment on the gadolinium oxide (GdxOy) thin films for the resistive random access memory (RRAM) applications was investigated. The material properties of the fluorine incorporated GdxOy films were analyzed by the X-ray photoelectron spectroscopy (XPS), ultraviolet photoelectron spectroscopy (UPS) and ultraviolet-visible spectroscopy (UV-VIS). Further, the set and reset voltages of the Pt/GdxOy/W RRAM devices with the CF4 plasma treatment were effectively reduced to â1.15 and 2.1Â V respectively owing to the low Schottky barrier height. The formation of GdF bonds can prevent the oxygen atoms from out-diffusing through Pt grain boundaries into the atmosphere, leading to the superior retention characteristics for over 104Â s. The CF4 plasma treated GdxOy RRAMs can sustain a resistance ratio of 102 for more than 800 times stable set/reset cycling, suitable for future low-voltage and high-performance nonvolatile memory operation.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Applied Surface Science - Volume 276, 1 July 2013, Pages 497-501
Journal: Applied Surface Science - Volume 276, 1 July 2013, Pages 497-501
نویسندگان
Jer-Chyi Wang, Yu-Ren Ye, Chao-Sung Lai, Chih-Ting Lin, Hsin-Chun Lu, Chih-I Wu, Po-Sheng Wang,