Self-assembled Ge islands and nanocrystals by RF magnetron sputtering and rapid thermal processing: The role of annealing temperature

► Ge nanostructures synthesized by RTP of sputtered Ge on Si (1 0 0) at 400 to 800 °C for 15 s. ► As the annealing time increased, the Ge islands' size became more uniform and dense. ► Increases in annealing time improved the crystallinity of the Ge nanocrystals. ► Annealing temperature influenced the nanocrystals formation and enhances photo currents of MSM photodetector.