In situ preparation of high dielectric constant, low-loss ferroelectric BaTiO3 films on Si at 500 °C

► BaTiO3 films were prepared on (1 0 0) Si substrates @ 500 °C by rf magnetron sputtering. ► The effects of gas pressure and target power on the property of BaTiO3 were studied. ► Under high target power, ferroelectric BaTiO3 films were obtained without annealing. ► These ferroelectric films showed a (0 0 1) texture and a smooth surface with Ra ∼ 1.7 nm. ► These films showed good ferroelectric and dielectric properties at room temperature.