کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5361565 | 1388274 | 2008 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
STM study of titanium silicide nanostructure growth on Si(1Â 1Â 1)-(19Ã19) substrate
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
We have performed an STM/STS study of titanium silicide nanostructures grown on Si(1Â 1Â 1)-(19Ã19) substrate by Ti evaporation and post-deposition annealing. The (19Ã19) reconstruction was induced by Ni doping. The reaction between the deposited material and the substrate at 220Â K was radically different from that observed in the case of the standard Si(1Â 1Â 1)-(7Â ÃÂ 7) substrate, as evidenced by the different evaporation time necessary to obtain a comparable coverage of the surface. The annealing was accomplished by direct heating of a crystal sample (up to 520Â K, 670Â K and 970Â K). Measurements showed that coalescence of Ti nanoislands began between 520Â K and 670Â K. Annealing above 900Â K led to alloying of Ti, Ni and Si. As a consequence, Si(1Â 1Â 1)-(7Â ÃÂ 7) reconstruction occurred at the cost of Si(1Â 1Â 1)-(19Ã19).
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Applied Surface Science - Volume 254, Issue 21, 30 August 2008, Pages 6948-6951
Journal: Applied Surface Science - Volume 254, Issue 21, 30 August 2008, Pages 6948-6951
نویسندگان
M. CÄgiel, M. Bazarnik, P. Biskupski, S. Winiarz, J. Gutek, A. BoÅ, S. Suto, S. Mielcarek, A. Wawro, R. Czajka,