Effect of the laser fluence on the surface characterization of β-FeSi2 films prepared by pulsed laser deposition

Single-phase β-FeSi2 films on silicon (1 0 0) were fabricated by pulse laser deposition. The structure and crystal quality of the samples were characterized by X-ray diffraction and Fourier transform infrared spectroscopy. The field scanning electron microscopy showed that the film thickness increases with the increasing of the laser fluence. Moreover, atomic force microscopy observations revealed the changes of surface properties with different laser fluence. Based upon all experimental results, it is found that 7 J/cm2 is the most favorable for the formation of β-FeSi2 thin films.

► Single-phase semiconducting iron disilicide (β-FeSi2) films on silicon (1 0 0) substrate were successfully fabricated by pulse laser deposition with different laser fluence. ► The structure and crystal quality of the samples were characterized by X-ray diffraction and Fourier transform infrared spectroscopy. ► The film thickness was estimated by field scanning electron microscopy and it is found that the film thickness increases with the increasing of the laser fluence. ► Based upon all experimental results, it is found that 7 J/cm2 is the most favorable for the formation of single phase β-FeSi2 thin films.