Study of nickel silicide formation on Si(1Â 1Â 0) substrate

► A higher annealing temperature is required for NiSi formation on Si(1 1 0) substrate. ► Larger Ni2Si or NiSi grains form on Si(1 1 0) substrate. ► Characteristics of NiSi/n-Si(1 1 0) Schottky contacts are inferior to that of NiSi/n-Si(1 0 0) Schottky contacts.