کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5365664 | 1388335 | 2008 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
New reconstruction-stoichiometry correlation for GaAs(0Â 0Â 1) surface treated by atomic hydrogen
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
The structure, stoichiometry and electronic properties of the GaAs(0 0 1)-(2 Ã 4)/c(2 Ã 8) surface treated by cycles of atomic hydrogen (AH) exposure and subsequent annealing in UHV were studied with the aim of preparing the Ga-rich surface at low temperatures. Low energy electron diffraction showed reproducible structural transformations in each cycle: AH adsorption at the (2 Ã 4)/c(2 Ã 8) surface led to the (1 Ã 4) structure at low AH exposure and to a (1 Ã 1) surface at higher AH exposure with subsequent restoration of the (2 Ã 4)/c(2 Ã 8) structure under annealing at 450 °C. The cycles of AH treatment preserved the atomic flatness of the GaAs(1 0 0) surface, keeping the mean roughness on to about 0.15 nm. The AH treatment cycles led to the oscillatory behavior of 3dAs/3dGa ratio with a gradual decrease to the value characteristic for the Ga-rich surface. Similar oscillatory variations were observed in the work function. The results are consistent with the loss of As from the surface as a result of the desorption of volatile compounds which are formed after reaction with H. The prepared Ga-rich GaAs(0 0 1) surface showed the stability of the (2 Ã 4)/c(2 Ã 8) structure up to the annealing temperature of 580 °C.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Applied Surface Science - Volume 254, Issue 24, 15 October 2008, Pages 8041-8045
Journal: Applied Surface Science - Volume 254, Issue 24, 15 October 2008, Pages 8041-8045
نویسندگان
K.V. Toropetsky, O.E. Tereshchenko, D.A. Petukhov, A.S. Terekhov,