Effect of deposition temperature on orientation and electrical properties of (K0.5Na0.5)NbO3 thin films by pulsed laser deposition

Lead-free ferroelectric K0.5Na0.5NbO3 (KNN) thin films have been prepared on Pt/TiO2/SiO2/Si substrates by pulsed laser deposition process. The structures, crystal orientations and electrical properties of thin films have been investigated as a function of deposition temperature from 680 °C to 760 °C. It is found that the deposition temperature plays an important role in the structures, crystal orientations and electrical properties of thin films. The crystallization of thin films improves with increasing deposition temperature. The thin film deposited at 760 °C exhibits strong (0 0 1) preferential orientation, large dielectric constant of 930 and the remnant polarization of 8.54 μC/cm2.

► Lead-free ferroelectric K0.5Na0.5NbO3 thin films have been prepared by pulsed laser deposition. ► The deposition temperature plays an important role in the structure, crystal orientation and electrical properties of the thin films deposited at a temperature range from 680 °C to 760 °C. ► The crystallization of the films improves with increasing deposition temperature. ► The thin film deposited at 760 °C exhibits strong (0 0 1) preferential orientation, large dielectric constant of 930 and remnant polarization of 8.54 μC/cm2.