Investigation of surface cleaning procedure of InP:S (1 0 0) substrates by high resolution XPS

The angle resolved X-ray photoelectron spectroscopy measurements were used to monitor a level of contamination of the InP:S (1 0 0) substrates during the cleaning processes with deionized water and isopropanol. Some contaminations with carbon and oxygen were found for a broken under ultrahigh vacuum InP:S substrate, indicating the contamination of the crystal during the growth process. The substrates after cleaning with deionized water and isopropanol were contaminated with carbon, oxygen, nitrogen and silicon. Concentration of carbon decreases inwards the substrates while concentration of oxygen is enhanced even in the deeper layers for both processes. The nitrogen concentration is higher for the samples rinsed with water. Roughness of the surfaces is higher for the samples rinsed with water what indicated the AFM measurements.