کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5366673 | 1388352 | 2006 | 7 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Effect of [Cu]/[In] ratio on properties of CuInS2 thin films prepared by successive ionic layer absorption and reaction method
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
CuInS2 ternary films were prepared by a soft solution processing, i.e. successive ionic layer absorption and reaction (SILAR) method. The films were deposited on glass substrates at room temperature and heat-treated under Ar atmosphere at 500 °C for 1 h. CuCl2 and InCl3 mixed solutions with different ionic ratios ([Cu]/[In]) were used as cation precursor and Na2S as the anion precursor. The effect of the [Cu]/[In] ratio in precursor solution on the structural, chemical stoichiometry, topographical, optical and electrical properties of CuInS2 thin films was investigated. XPS results demonstrated that stoichiometric CuInS2 film can be obtained by adjusting [Cu]/[In] ratios in solution. Chalcopyrite structure of the film was confirmed by XRD analysis. The near stoichiometric CuInS2 film has the optical band gap Eg of 1.45 and resistivity decreased with increase of [Cu]/[In] ratios.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Applied Surface Science - Volume 252, Issue 10, 15 March 2006, Pages 3737-3743
Journal: Applied Surface Science - Volume 252, Issue 10, 15 March 2006, Pages 3737-3743
نویسندگان
Yong Shi, Zhengguo Jin, Chunyan Li, Hesong An, Jijun Qiu,