Enhanced dielectric properties of lead barium zirconate thin films by manganese doping

(Pb0.5Ba0.5)ZrO3 (PBZ) and 1 mol% Mn-doped (Pb0.5Ba0.5)ZrO3 (Mn-PBZ) sol were successfully fabricated, and corresponding thin films were deposited on Pt(1 1 1)/TiO2/SiO2/Si(1 0 0) substrates by spin-coating method. Effects of Mn doping on the microstructure and electrical properties of PBZ thin films were investigated systemically. X-ray diffraction patterns showed that both films had a polycrystalline perovskite structure, and that the degree of (1 1 1) orientation were increased by Mn doping. Dielectric measurements illustrated that Mn-doped PBZ thin films not only had a larger dielectric constant, but also possessed a smaller dielectric loss. Accordingly, the tunability and the figure of merit of PBZ films were improved by Mn doping.