کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5368664 | 1388405 | 2006 | 5 صفحه PDF | دانلود رایگان |
Infrared (IR) studies have been carried out on porous silicon samples to infer on the changes in the surface bonding in the porous silicon (PS) layer due to chloride (Clâ) and subsequent fluoride (Fâ) ion exposures with respect to time. It is observed that silicon hydride linkages decreases and silicon oxide linkages increases with time of exposure to HCl, suggesting a possible oxidation of the porous layer. IR study revealed the formation of SiO (silanones) bonds. A possible mechanism for the formation of silanones from SiOH species has been proposed to explain the observation. We also observed a saturation of silicon oxide groups with complete disappearance of silicon hydride peaks indicating the complete conversion of silicon hydride to oxides. Furthermore on exposure to Fâ, the IR spectrum showed a rapid destruction of silicon oxygen linkages.
Journal: Applied Surface Science - Volume 252, Issue 24, 15 October 2006, Pages 8399-8403