کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5368669 | 1388405 | 2006 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Photoluminescence from C+ ion-implanted and electrochemical etched Si layers
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
The microstructural and optical analysis of Si layers emitting blue luminescence at about 431Â nm is reported. These structures have been synthesized by C+ ion implantation and high-temperature annealing in hydrogen atmosphere and electrochemical etching sequentially. With the increasing etching time, the intensity of the blue peak increases at first, decreases then and is substituted by a new red peak at 716Â nm at last, which shows characteristics of the emission of porous silicon. CO compounds are induced during C+ implantation and nanometer silicon with embedded structure is formed during annealing, which contributes to the blue emission. The possible mechanism of photoluminescence is presented.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Applied Surface Science - Volume 252, Issue 24, 15 October 2006, Pages 8424-8427
Journal: Applied Surface Science - Volume 252, Issue 24, 15 October 2006, Pages 8424-8427
نویسندگان
Liwei Shi, Qiang Wang, Yuguo Li, Chengshan Xue, Huizhao Zhuang,