کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5368687 | 1388405 | 2006 | 6 صفحه PDF | دانلود رایگان |
High energy laser plasma-produced Cu ions have been implanted in silicon substrates placed at different distances and angles with respect to the normal to the surface of the ablated target. The implanted samples have been produced using the iodine high power Prague Asterix Laser System (PALS) using 438Â nm wavelength irradiating in vacuum a Cu target. The high laser pulse energy (up to 230Â J) and the short pulse duration (400Â ps) produced a non-equilibrium plasma expanding mainly along the normal to the Cu target surface. Time-of-flight (TOF) technique was employed, through an electrostatic ion energy analyzer (IEA) placed along the target normal, in order to measure the ion energy, the ion charge state, the energy distribution and the charge state distribution. Ions had a Boltzmann energy distributions with an energy increasing with the charge state. At a laser fluence of the order of 6Â ÃÂ 106Â J/cm2, the maximum ion energy was about 600Â keV and the maximum charge state was about 27+.In order to investigate the implantation processes, Cu depth profiles have been performed with Rutherford backscattering spectrometry (RBS) of 1.5Â MeV helium ions, Auger electron spectroscopy (AES) with 3Â keV electron beam and 1Â keV Ar sputtering ions in combination with scanning electron microscopy (SEM). Surface analysis results indicate that Cu ions are implanted within the first surface layers and that the ion penetration ranges are in agreement with the ion energy measured with IEA analysis.
Journal: Applied Surface Science - Volume 252, Issue 24, 15 October 2006, Pages 8533-8538