کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
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5368716 | 1388405 | 2006 | 4 صفحه PDF | دانلود رایگان |
The strained Si0.8Ge0.2 film has been prepared onto Si substrate by using an ultrahigh-vacuum chemical vapor deposition system. A low cost wavelength filter of photodetector has been demonstrated for the first time. This filter was simply carried out by just inserting a 60Â nm thick a-Si:H capped layer onto Si0.8Ge0.2 thin film. The room-temperature photoluminescence shows that the sample with Si0.8Ge0.2 layer has a tendency to shift wavelength into longer regime than that of Si substrate. The full width at half maximum (FWHM) was 185Â nm for Si0.8Ge0.2 photodetector without a-Si:H capped. By inserting a 60Â nm thick a-Si:H capped layer, the FWHM was narrowed into 97Â nm. This demonstrates that the a-Si:H capped layer has an ability acted as wavelength filter in our study.
Journal: Applied Surface Science - Volume 252, Issue 24, 15 October 2006, Pages 8702-8705