Effect of UV/ozone treatment of the dielectric layer on the device performance of pentacene thin film transistors

The AFM images illustrate the difference between the two pentacene films deposited on ozone treated and untreated surfaces. Decreased threshold voltage and improved mobility were obtained after UV/ozone treatment. Electron spectroscopic measurement and film morphology observation indicated that the improved TFT performance was achieved by the reduced contamination at the pentacene/SiO2 interface and the increased grain size.