Chemical and electrochemical properties of molybdenum oxide thin films prepared by reactive pulsed-laser assisted deposition

Molybdenum oxide (MoO3) thin films were prepared by pulsed-laser assisted deposition (PLD) over a wide range of growth temperature, 30-500 °C. The chemical composition, crystal structure, and electrochemical properties of PLD MoO3 thin films were investigated as a function of growth temperature. The results obtained are presented and discussed.