کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
539769 1450393 2010 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
New hybrid organic–inorganic sol–gel positive resist
موضوعات مرتبط
مهندسی و علوم پایه مهندسی کامپیوتر سخت افزارها و معماری
پیش نمایش صفحه اول مقاله
New hybrid organic–inorganic sol–gel positive resist
چکیده انگلیسی

The direct nanopatterning of a novel hybrid organic–inorganic sol–gel film based on bridged polysilsesquioxanes (BPS) using X-ray synchrotron radiation is reported. The main advantages of a direct fabrication technique with respect to conventional photolithography are represented by the possibility to bypass some typical post-exposure lithographic steps and to avoid the use of a sacrificial layer. The distinctive features rendering hybrid BPS-based material innovative for photolithographic applications are: the patternability as resist, the positive tone behaviour exhibited under X-ray irradiation, the porous structure demonstrated at low temperature, and the possibility to widely tailor material electro-optical and structural properties to experimental needs. A systematic investigation of the interactions between sol–gel BPS films based on the bis(triethoxysilyl)benzene precursor and soft X-rays is conducted. Under X-ray exposure, BPS-based films suffer structural changes attributed to the organic bridge breaking, and become soluble in suitable acidic aqueous solutions, producing final lithographies of sub-micron resolution, high contrast and good edge definition.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronic Engineering - Volume 87, Issues 5–8, May–August 2010, Pages 947–950
نویسندگان
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