کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5400490 | 1505917 | 2013 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Emission properties of ZnSe scintillation crystals co-doped by oxygen and aluminum
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
Photoluminescence properties of ZnSe scintillation crystals co-doped with oxygen and aluminum are studied together with conventional tellurium-doped ZnSe scintillators, for comparison, under continuous-wave and pulsed excitation in the temperature range from 8 to 300Â K. A strong enhancement of the low-energy component in the deep-level-related emission is observed as the temperature approaches the room temperature. Fitting of the experimentally observed luminescence decay with calculations of the decay due to donor-acceptor pair recombination revealed that the increased density of recombination centers is responsible for the enhanced low-energy emission component in the co-doped crystals. The significant thermal enhancement of this spectral component is explained by carrier detrapping from the trapping centers abundant in the co-doped crystal due to a large concentration of aluminum impurities.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Luminescence - Volume 143, November 2013, Pages 473-478
Journal: Journal of Luminescence - Volume 143, November 2013, Pages 473-478
نویسندگان
D. Shevchenko, V. Gavryushin, J. MickeviÄius, N. Starzhinskiy, I. Zenya, A. Zhukov, G. Tamulaitis,