Reducing the resistivity of electron and ion beam assisted deposited Pt

Dual platform (FIB/SEM) systems can be used to deposit platinum by both ion and electron beam assisted deposition by the breakdown of a suitable inorganic metallic precursor. The resistivity of electron beam deposited Pt is typically 2–3 orders of magnitude higher than that of the ion beam deposited Pt. Experiments to determine the cause of the difference in the resistivity and to decrease the resistivity of electron beam deposited Pt are reported. Changing the dwell times and incident energy did not affect the resistivity of the deposited Pt. Both annealing at 500 °C in forming gas (H2/N2) and implanting electron beam deposited Pt with gallium reduced its resistivity by a factor of 10. From the microstructure and chemical analysis and transport measurements, it is concluded that the difference in resistivity is due to the differences in the nanostructure and chemical composition and due to the presence of gallium.