کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
540444 871316 2011 6 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Moore’s crystal ball: Device physics and technology past the 15 nm generation
موضوعات مرتبط
مهندسی و علوم پایه مهندسی کامپیوتر سخت افزارها و معماری
پیش نمایش صفحه اول مقاله
Moore’s crystal ball: Device physics and technology past the 15 nm generation
چکیده انگلیسی

This paper will discuss advanced CMOS transistor architectures for the 15 nm node and beyond. Transistor architectures such as ultra-thin body (UTB), FinFET (and related architectures such as Trigate, Omega-FET, Pi-FET), and nanowire device architectures will be compared and contrasted. Key technology challenges (such as mobility, resistance and capacitance) shared by all the architectures will be discussed in relation to recent research results. The impact of new transistor architectures on the progression of Moore’s Law will be summarized.

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ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronic Engineering - Volume 88, Issue 7, July 2011, Pages 1044–1049
نویسندگان
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