کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
540675 | 871333 | 2008 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Cu contact on NiSi substrate with a Ta/TaN barrier stack
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی کامپیوتر
سخت افزارها و معماری
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چکیده انگلیسی
The thermal and electrical stabilities of Cu contact on NiSi substrate with and without a Ta/TaN barrier stack in between were investigated. Four-point probe (FPP), X-ray diffraction (XRD), scanning electron microscopy (SEM), depth-profiling X-ray photoelectron spectroscopy (XPS), and Schottky barrier height (SBH) measurement were carried out to characterize the diffusion barrier properties. The SBH measurement provides a very sensitive method to characterize the diffusion barrier properties for the copper contact on NiSi/Si. The results show that the Ta/TaN stack can be both thermally and electrically stable after annealing at 450 °C for 30 min and it will have a potential application as a diffusion barrier for Cu contact on NiSi.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronic Engineering - Volume 85, Issue 10, October 2008, Pages 2028–2031
Journal: Microelectronic Engineering - Volume 85, Issue 10, October 2008, Pages 2028–2031
نویسندگان
Mi Zhou, Ying Zhao, Wei Huang, Bao-Min Wang, Guo-Ping Ru, Yu-Long Jiang, Ran Liu, Xin-Ping Qu,