کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
540678 | 871333 | 2008 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Extensive investigations of temperature influence on barrier integrity during reliability testing
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی کامپیوتر
سخت افزارها و معماری
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چکیده انگلیسی
Investigation of stress migration phenomena is one of the key aspects to characterize metallization reliability. Typical test methodologies are investigations of resistance shifts at wafer-level or package-level temperature storage tests under a temperature range between 150 °C and 275 °C. During these tests a very limited resistance increase dependent on the test structure is allowed. Most recently we encounter unusual resistance shift at the highest stress temperature which did not yield classical stress voiding detectable by failure analysis. We found changes in barrier integrity explaining the resistance shift by barrier oxidization. This has been verified by specially prepared material as well as extensive failure analysis investigation.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronic Engineering - Volume 85, Issue 10, October 2008, Pages 2042-2046
Journal: Microelectronic Engineering - Volume 85, Issue 10, October 2008, Pages 2042-2046
نویسندگان
O. Aubel, M.A. Meyer, F. Feustel, H.J. Engelmann, I. Zienert, J. Poppe, H. Schmidt, D. Gehre, H. Geisler, E. Langer, P. Limbecker, T. Foltyn, C. Witt, W. Yao, S. Thierbach, F. Koschinsky, C. Zistl,