کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
540683 | 871333 | 2008 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Effect of wet chemical substrate pretreatment on the growth behavior of Ta(N) films deposited by thermal ALD
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی کامپیوتر
سخت افزارها و معماری
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
The deposition of ultra thin Ta(N) films by ALD is a possibility to achieve conformal film thickness and suitable step coverage for microelectronic applications. Due to the sorption of a precursor molecule to the substrate surface, the chemical interface conditions are important. In the present study selected substrate pretreatments were investigated by in situ XPS and spectroscopic ellipsometry in reference to the amount of carbon containing contamination and oxygen and in reference to the ALD growth rate of Ta(N) films. Furthermore, surface roughness was measured by AFM and will be discussed in dependence on the individual pretreatment and the ALD Ta(N) cycle number.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronic Engineering - Volume 85, Issue 10, October 2008, Pages 2064–2067
Journal: Microelectronic Engineering - Volume 85, Issue 10, October 2008, Pages 2064–2067
نویسندگان
S. Strehle, H. Schumacher, D. Schmidt, M. Knaut, M. Albert, J.W. Bartha,