کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
540688 871333 2008 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Phosphorous doped SOG as a pre-metal-dielectric for sub-50 nm technology nodes
موضوعات مرتبط
مهندسی و علوم پایه مهندسی کامپیوتر سخت افزارها و معماری
پیش نمایش صفحه اول مقاله
Phosphorous doped SOG as a pre-metal-dielectric for sub-50 nm technology nodes
چکیده انگلیسی

The goal of this work is to find a substitute for chemically-vapour-deposited (CVD) Borophosphosilicate glass (BPSG), which is currently used as a pre-metal dielectric (PMD) for sub 50 nm. Two spin-on candidates are considered, out of which one contains four weight percent (wt.%) of phosphor. First, their material properties are discussed and then their integration challenges are presented. Particularly, issues like thermal budget, direct CMP capability and compatibility to wet-cleans are explored. Then the suitable candidate is tested electrically.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronic Engineering - Volume 85, Issue 10, October 2008, Pages 2085–2088
نویسندگان
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