کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
540688 | 871333 | 2008 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Phosphorous doped SOG as a pre-metal-dielectric for sub-50 nm technology nodes
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی کامپیوتر
سخت افزارها و معماری
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
The goal of this work is to find a substitute for chemically-vapour-deposited (CVD) Borophosphosilicate glass (BPSG), which is currently used as a pre-metal dielectric (PMD) for sub 50 nm. Two spin-on candidates are considered, out of which one contains four weight percent (wt.%) of phosphor. First, their material properties are discussed and then their integration challenges are presented. Particularly, issues like thermal budget, direct CMP capability and compatibility to wet-cleans are explored. Then the suitable candidate is tested electrically.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronic Engineering - Volume 85, Issue 10, October 2008, Pages 2085–2088
Journal: Microelectronic Engineering - Volume 85, Issue 10, October 2008, Pages 2085–2088
نویسندگان
Arabinda Das, Momtchil Stavrev, Heike Prenz, Markus Schardin, Ines Uhlig, Werner Graf, Hans-Peter Sperlich,