کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
540697 871333 2008 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Structure analysis and property improvements of the computer-simulated fullerene-based ultralow-k dielectrics
موضوعات مرتبط
مهندسی و علوم پایه مهندسی کامپیوتر سخت افزارها و معماری
پیش نمایش صفحه اول مقاله
Structure analysis and property improvements of the computer-simulated fullerene-based ultralow-k dielectrics
چکیده انگلیسی

We have recently proposed new ultralow-k dielectric materials using a theoretical approach called molecular design. This approach requires the application of complementary theoretical methods to describe the complex problems. The methods include classical, continuum theoretical, and quantum-chemical approximations. The advantage of the present approach is that various possible candidates for ultralow-k dielectrics can be tested theoretically without performing expensive and time-consuming experiments. In this study, we analyze the way to connect linker molecules to the node molecules, in order to improve mechanical and dielectric properties of generated ultralow-k structures. Two different types of bonding linker molecules to the cage C60 molecule with the >CC< and >CCH2CH2C< linker molecules are possible. It is shown that at the present improvement step it is possible to get property combinations with dielectric constant of k = 2.2 and bulk modulus of B = 33 GPa for the simple cubic topology.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronic Engineering - Volume 85, Issue 10, October 2008, Pages 2118–2122
نویسندگان
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