De-embedding techniques for nanoscale characterization of semiconductors by scanning microwave microscopy

• A methodology for de-embedding scanning microwave microscopy measurements is presented.
• The proposed analysis is based on the assessment of the SMM system response in the linear scale.
• The methodology is experimentally evaluated by a straightforward comparison with an EFM based calibration method.
• Based on the obtained results the features of each methodology are also discussed in details.
• The paper provides a full picture of the up to date available experimental techniques for de-embedding SMM measurements.

The paper presents a methodology for de-embedding scanning microwave microscopy (SMM) measurements, mainly for semiconductor characterization. Analytical modeling, a parametric study and experimental verification are presented. The proposed methodology is based on the analysis of system response in the linear scale, instead of the dB scale commonly utilized in RF measurements, and on expressing the standard calibration capacitances per unit area. In this way the total measured capacitance is determined by the tip area which is then obtained as a result of the model fitting on the experimental data. Additional evaluation is performed by a straightforward experimental comparison with the usually adopted technique that is based on the electrostatic force microscopy approach curve method. The results obtained by the application of both techniques on the same tip during the same experiment were found to be in good agreement and moreover allowed a detailed discussion on the features of each one of the two methodologies. The paper provides also in this way useful knowledge for the potential users in order to choose the most appropriate technique according to the corresponding SMM application.

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