کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
541119 1450322 2016 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Low-temperature thermal reduction of graphene oxide films in ambient atmosphere: Infra-red spectroscopic studies and gas sensing applications
ترجمه فارسی عنوان
کاهش حرارت پایین در فیلم های اکسید گرافین در محیط محیط: مطالعات اسپکتروسکوپی مادون قرمز و کاربردهای حسگر گاز
کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه مهندسی کامپیوتر سخت افزارها و معماری
چکیده انگلیسی


• Mild heating of graphene oxide in ambient air renders it conductive.
• Heating in ambient air triggers concomitant redox reactions.
• The product is reduced graphene oxide with oxygen containing functionalities.
• A gas sensor with GO reduced at different temperatures, is fabricated.
• A critical temperature exists for sensor performance optimization.

Low-temperature (≤ 300 °C) thermal treatment of graphene oxide (GO) films in ambient air is examined. In particular, the role of low to moderate heating temperatures, to the evolution of the original functional groups anchored on the GO skeleton, is closely investigated by Fourier transform infra red (FT-IR) spectroscopy. The study shows that, contrary to vacuum or inert ambient heating, heating under ambient atmosphere triggers concomitant reduction and oxidation reactions. Hydroxyl and epoxy groups are progressively eliminated, but at the same time newly formed carbonyls appear due to oxidation. Electrical measurements indicate that despite the presence of oxygen containing groups in the restored graphene sp2 network, the conductivity enhances. The process, therefore, lends itself to the production of conductive reduced GO with increased functionalities suitable for application in gas sensor fabrication. The concept is evaluated with a humidity sensor where thermally reduced GO is prepared at different reduction temperatures. The evaluation unveils that a critical reduction temperature exists where sensor sensitivity is optimized.

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ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronic Engineering - Volume 159, 15 June 2016, Pages 146–150
نویسندگان
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