Structural and optical study of BInGaAs/GaAs quantum wells grown by MOVPE emitting above 1.1 eV

• Structural and optical BInGaAs/GaAs quantum well properties, grown by metal organic vapor phase epitaxy (MOVPE).
• At room temperature (300 K) PL band range 1.19 and 1.14 eV of the emission energies.
• BInGaAs QWs offer the new band gap energy which can be used in multi-junction solar cell.

High resolution X-ray diffraction (HRXRD) and Photoluminescence (PL) spectroscopies have been utilized to achieve structural and optical BInGaAs/GaAs quantum well properties, grown by metal organic vapor phase epitaxy (MOVPE). A significant fraction of indium (36% and 46%) has been incorporated into BGaAs which show that a BxInyGa1-x-yAs can be grown lattice matched to GaAs. At room temperature PL energy emission is at 1.19 eV for lower indium composition and 1.14 eV for the higher. It has been revealed that the PL band shifts significantly to low energy side to 50 meV with increasing indium solid composition. This confirms that the BInGaAs semiconductor material is well suited for active cell layers in multi-junction solar emitting near 1.1 eV.

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