کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
5422048 1507899 2014 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Characterization of early growth stages of Pb/Ge(001)
موضوعات مرتبط
مهندسی و علوم پایه شیمی شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
Characterization of early growth stages of Pb/Ge(001)
چکیده انگلیسی
Early stages of thin Pb film growth on Ge(001) substrate, exhibiting quantum size effects (QSE), are characterized by means of Photoelectron Diffraction and Helium Atom Scattering. Pb is found to form a commensurate first monolayer, while an ordered layer-by-layer growth only sets in after deposition of 4 monolayers. In the intermediate coverage range no long range order of the overlayer is established and we find that uncorrelated islands of preferred four-layer thickness are formed. Continuous Pb film with long range order emerges through islands coalescence close to a coverage of 4 monolayers, upon which a more regular layer-by-layer growth mode sets in.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Surface Science - Volume 630, December 2014, Pages 260-264
نویسندگان
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