کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5423162 | 1507952 | 2010 | 8 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Competing nucleation mechanisms and growth of InAsSbP quantum dots and nano-pits on the InAs(100) surface
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
InAsSbP quantum dots (QDs) and nano-pits (NPs) are grown on a InAs(100) surface by liquid phase epitaxy (LPE). Their morphology, dimensions and distribution density are investigated by high resolution scanning electron microscopy, Fourier-transform infrared spectroscopy, X-ray diffraction and total energy calculations. QDs average density ranges from 5 to 7Â ÃÂ 109Â cmâ2, with heights and widths having a Gaussian distribution with sizes from 5Â nm to 15Â nm and 10Â nm to 40Â nm respectively. The average pits density is (2-6)Â ÃÂ 1010Â cmâ2 with dimensions ranging from 5-30Â nm in width and depth. We also find a shift in the absorption edge towards the longer wavelengths together with broadening towards shorter wavelengths indicating that these QDs and lateral overgrown nano-pits are grown at the n-InAs/p-InAsSbP heterojunction interface. Together with total energy calculations, the results indicate that lattice mismatch ratio plays a central role in the growth of these strain-induced nano-objects.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Surface Science - Volume 604, Issues 13â14, 15 July 2010, Pages 1127-1134
Journal: Surface Science - Volume 604, Issues 13â14, 15 July 2010, Pages 1127-1134
نویسندگان
V.M. Aroutiounian, K.M. Gambaryan, P. Soukiassian,