کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5424716 | 1395834 | 2008 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Scanning tunnelling microscopy study on hydrogen removal from Si(0Â 0Â 1)-(2Â ÃÂ 1):H surface excited with low-energy electron beams
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
Direct atomic-scale imaging using scanning tunnelling microscopy (STM) shows the formation of un-terminated single dangling bond (DB) on Si(0Â 0Â 1)-(2Â ÃÂ 1):H irradiated with low-energy electron beams below 13Â eV. The concentration of DB sites increases initially with excitation dose, followed by saturation at the levels that depend on the beam-current density. It is shown that re-termination of DBs with hydrogen, accelerated under electron irradiation, is responsible for the saturation. We conclude that re-terminating hydrogen is issued from bulk of Si. Quantitative analyses of the results determine the precise Si-H bond rupture cross section to be 1.3Â ÃÂ 10â20Â cm2, which is constant for electron energy from 2.6 to 12.6Â eV. Mechanism of Si-H bond rupture is discussed based on the results.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Surface Science - Volume 602, Issue 7, 1 April 2008, Pages 1322-1327
Journal: Surface Science - Volume 602, Issue 7, 1 April 2008, Pages 1322-1327
نویسندگان
J. Kanasaki, K. Ichihashi, K. Tanimura,