Evolution of chemical states within the HfO2/Si(1Â 0Â 0) interface upon annealing, prepared by direct electron beam evaporation

We demonstrate the preparation of the system HfO2/Si(1 0 0) by direct evaporation of hafnium dioxide from a specially prepared electron beam evaporator. Investigating the system by means of photoelectron spectroscopy in the soft X-ray regime, we show the system's interface being free of silicon dioxide and hafnium silicide after evaporation. Upon annealing the formation of SiO2 at the interface is investigated by using high resolution photoemission spectra. Their separation into different sub-oxides at the interface is presented. The structural order at the crystalline/amorphous interface is investigated by X-ray photoelectron diffraction. The system's degradation is observed at above 700 °C.