Spin-dependent transmission of holes in III-V diluted magnetic semiconductor based heterostructure

Based on the mean field approximation, we investigated analytically the spin-transport of holes through heterostructure formed by magnetic layers Ga(1−x)MnxAs separated by a non-magnetic spacer GaAs. Injected holes of up (down) spin have different transmission coefficient which oscillates for spin-down and increases fast for spin-up. The significant quantum size and (RKKY) interaction are considered simultaneously. The results indicate also that as the strength of the magnetic and non-magnetic layers increases, the spin-transmission changes. The results can be used to create efficient spin-filters.