Two-dimensional simulations of amplification of space charge waves in a strained Si/SiGe heterostructure at 77Â K

We theoretically investigated the propagation and amplification of space charge waves on the surface of a strained Si/SiGe heterostructure at 77 K, using the negative differential conductance phenomenon. In this work, we also have done a comparison between the n-GaAs thin film and strained Si/SiGe heterostructure with respect to the propagation of space charge waves. We have obtained results in 2D of propagation and amplification of space charge waves in a strained Si/SiGe heterostructure until for frequencies f<40 GHz.