Characterization of Ge2Sb2Te5 thin film transistor and its application in non-volatile memory

With the increasing requirement of high density memory technology, a new cell structure—1TR has received much attention. It consists of a single thin film transistor (TFT) with chalcogenide Ge2Sb2Te5 as the channel material. In order to evaluate the feasibility of its application in the field of non-volatile memory, we take a further step in researching on the characteristics of GST-TFT. We fabricated a back-gate GST-TFT and investigated the output and transfer characteristics of its two states. The experimental results show that gate voltage can modulate the GST channel currents in both the amorphous and the crystalline states. Based on the experiments, we can expect that this novel device can ultimately lead to a new nonvolatile memory technology with even higher storage density.