کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
543163 | 871633 | 2014 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Effects of nitrogen incorporation by plasma immersion ion implantation on electrical characteristics of high-k gated MOS devices
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی کامپیوتر
سخت افزارها و معماری
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
Nitridation treatments are generally used to enhance the thermal stability and reliability of high-k dielectric. It is observed in this work that, the electrical characteristics of high-k gated MOS devices can be significantly improved by a nitridation treatment using plasma immersion ion implantation (PIII). Equivalent oxide thickness, (EOT) and interface trap density of MOS devices are reduced by a proper PIII treatment. At an identical EOT, the leakage current of devices with PIII nitridation can be reduced by about three orders of magnitude. The optimal process conditions for PIII treatment include nitrogen incorporation through metal gate, ion energy of 2.5 keV, and implantation time of 15 min.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronic Engineering - Volume 87, Issue 10, October 2010, Pages 2014–2018
Journal: Microelectronic Engineering - Volume 87, Issue 10, October 2010, Pages 2014–2018
نویسندگان
Chung-Hao Fu, Kuei-Shu Chang-Liao, Tien-Ko Wang, W.F. Tsai, C.F. Ai,