کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
543317 871652 2012 11 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Design and simulation of single-source single-electron complementary 4-bit multiplexing nano-circuits
موضوعات مرتبط
مهندسی و علوم پایه مهندسی کامپیوتر سخت افزارها و معماری
پیش نمایش صفحه اول مقاله
Design and simulation of single-source single-electron complementary 4-bit multiplexing nano-circuits
چکیده انگلیسی

The Single-Electron Transistor (SET) and Linear Threshold Gate (LTG) are among the basic functional Single-Electron Nano-Devices (SENDs). In this paper, these basic SENDs are used to design a single-source (SS) single-electron (SE) complementary 4-bit (4–1) multiplexer. This design is compared with the previously reported multiple-source SE complementary 4-bit multiplexer. The first reported SS SE complementary 4-bit demultiplexer is also introduced. The detailed schematic diagrams as well as the corresponding simulation results of the designed SE 4-bit multiplexer/demultiplexer (using SIMON 2.0 and SECS Monte Carlo SE simulators) are illustrated. The simulation results include input, control, and output signals; free energy and stability diagrams; and maximum allowed signal frequency. The estimated delay and energy consumption is calculated and presented.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronics Journal - Volume 43, Issue 7, July 2012, Pages 473–483
نویسندگان
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