Characterization of interfacial reaction and chemical bonding features of LaOx/HfO2 stack structure formed on thermally-grown SiO2/Si(1 0 0)

A stack structure consisting of ∼1.5 nm-thick LaOx and ∼4.0 nm-thick HfO2 was formed on thermally grown SiO2 on Si(1 0 0) by MOCVD using dipivaloymethanato precursors, and the influence of N2 annealing on interfacial reaction for this stack structure was examined by using X-ray photoelectron spectroscopy and Fourier transform infrared attenuated total reflection. We found that compositional mixing between LaOx and HfO2 becomes significant from 600 °C upwards and that interfacial reaction between HfLayOz and SiO2 proceeds consistently at 1000 °C in N2 ambience.