کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
543421 | 1450394 | 2009 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Characterization of TiOxNy nanoparticles embedded in HfOxNy as charge trapping nodes for nonvolatile memory device applications
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی کامپیوتر
سخت افزارها و معماری
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
Silicon-oxide–nitride-oxide–silicon devices with nanoparticles (NPs) as charge trapping nodes (CTNs) are important to provide enhanced performance for nonvolatile memory devices. To study these topics, the TiOxNy metal oxide NPs embedded in the HfOxNy high-k dielectric as CTNs of the nonvolatile memory devices were investigated via the thermal synthesis using Ti thin-film oxidized in the mixed O2/N2 ambient. Well-isolated TiOxNy NPs with a diameter of 5–20 nm, a surface density of ∼3 × 1011 cm−2, and a charge trap density of around 2.33 × 1012 cm−2 were demonstrated. The writing characteristic measurements illustrate that the memory effect is mainly due to the hole trapping.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronic Engineering - Volume 86, Issues 7–9, July–September 2009, Pages 1692–1695
Journal: Microelectronic Engineering - Volume 86, Issues 7–9, July–September 2009, Pages 1692–1695
نویسندگان
Chien-Wei Liu, Chin-Lung Cheng, Kuei-Shu Chang-Liao, Jin-Tsong Jeng, Bau-Tong Dai, Chen-Pang Tsai,