کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
543428 1450394 2009 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Stability and Schottky barrier of silicides: First-principles study
موضوعات مرتبط
مهندسی و علوم پایه مهندسی کامپیوتر سخت افزارها و معماری
پیش نمایش صفحه اول مقاله
Stability and Schottky barrier of silicides: First-principles study
چکیده انگلیسی

Using first-principles calculations, we explain why some metal atoms such as Ni produce bulk silicides and the others like Au never produce silicides, why silicides with some stoichiometry are difficult to grow on Si substrate, and why Schottky barrier for electrons simply decreases as the Si ratio in silicides increases. It is shown that the key origins to answer these questions are the electron transfer from Si-p to metal-atom-d orbitals and the energy losses by the elastic strain and the bond-breaking at the interface.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronic Engineering - Volume 86, Issues 7–9, July–September 2009, Pages 1718–1721
نویسندگان
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