کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
543430 | 1450394 | 2009 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Flat band voltage control on low Vt metal-gate/high-κ CMOSFETs with small EOT (Invited Paper)
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی کامپیوتر
سخت افزارها و معماری
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چکیده انگلیسی
The unwanted high threshold voltage (Vt) is the major challenge for metal-gate/high-κ CMOS especially at small equivalent-oxide-thickness (EOT). We have investigated the high Vt issue that is due to flat-band voltage (Vfb) roll-off at smaller EOT. A mechanism of charged oxygen vacancies formed by interface reaction was proposed to explain the Vfb roll-off effect. This interface reaction can be decreased by inserting a thin interfacial SiON and using novel low temperature process. The self-aligned and gate-first metal-gate/high-κ CMOSFETs using these methods have achieved low Vt and good control of Vfb roll-off at small 0.6–1.2 nm EOT.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronic Engineering - Volume 86, Issues 7–9, July–September 2009, Pages 1728–1732
Journal: Microelectronic Engineering - Volume 86, Issues 7–9, July–September 2009, Pages 1728–1732
نویسندگان
Albert Chin, M.F. Chang, S.H. Lin, W.B. Chen, P.T. Lee, F.S. Yeh, C.C. Liao, M.-F. Li, N.C. Su, S.J. Wang,