کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
543448 | 1450394 | 2009 | 8 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Reliability of charge trapping memories with high-k control dielectrics (Invited Paper)
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی کامپیوتر
سخت افزارها و معماری
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
In this paper, we evaluate the potentiality of high-k materials (Al2O3, HfO2 and HfAlO) for interpoly application in non-volatile memories. A study of the leakage currents of high-k based capacitors allowed to discuss the retention performances at room and high temperatures of high-k interpoly dielectrics. High-k materials are then integrated as control dielectrics in silicon nanocrystal and SONOS (Si/SiO2/Si3N4/SiO2/Si) memories. The role of the high-k layer on the memory performances is discussed; a particular attention being devoted to the retention characteristics. Analytical models, combined with experimental results obtained on various structures allowed to analyze the mechanisms involved during retention.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronic Engineering - Volume 86, Issues 7–9, July–September 2009, Pages 1796–1803
Journal: Microelectronic Engineering - Volume 86, Issues 7–9, July–September 2009, Pages 1796–1803
نویسندگان
G. Molas, M. Bocquet, E. Vianello, L. Perniola, H. Grampeix, J.P. Colonna, L. Masarotto, F. Martin, P. Brianceau, M. Gély, C. Bongiorno, S. Lombardo, G. Pananakakis, G. Ghibaudo, B. De Salvo,