کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
543460 | 1450394 | 2009 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Electrical characterization of metal-ferroelectric (Mn-substituted BiFeO3)-insulator (HfO2)-semiconductor capacitors for nonvolatile memory applications
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی کامپیوتر
سخت افزارها و معماری
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چکیده انگلیسی
Metal-ferroelectric (Mn-substituted BiFeO3)-insulator (HfO2)-semiconductor has been fabricated by co-sputtering technique. X-ray diffraction (XRD) patterns have proven the existence of a substitution phase. The shift in binding energy of Fe ions and the change in atom ratio of Mn to Fe were analyzed by X-ray photoelectron spectra (XPS). The memory windows as functions of insulator film thickness and annealing temperature were compared. The maximum memory window is 3 V at the sweep voltage of 8 V with thicker (60 nm) HfO2. The leakage current and the charge injection effect can be reduced with increasing the amount of substituting Mn for Fe-site.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronic Engineering - Volume 86, Issues 7–9, July–September 2009, Pages 1845–1848
Journal: Microelectronic Engineering - Volume 86, Issues 7–9, July–September 2009, Pages 1845–1848
نویسندگان
Pi-chun Juan, Chen-Hao Wang,